, li ne.. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 silicon npn power transistor KSD5072 description ? high breakdown voltage- : vcbo= 1500v (min) ? high switching speed ? high reliability ? built-in damper diode applications ? designed for color tv horizontal output applicaitions absolute maximum ratings(ta=25'c) symbol vcbo vceo vebo ic icp pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current- continuous collector current-peak collector power dissipation @ tc=25'c junction temperature storage temperature range value 1500 800 6 5 16 60 150 -55-150 unit v v ' v a a w .?c 'c b 2 ?jo? ? k ti^lj pin 1.base 2. collector 3. emitter . ,. to-3pml package silicon npn power transistor KSD5072 electrical characteristics tc=25"c unless otherwise specified symbol vcs(sat) vse(sat) icbo iebo hfe fi vecf tf parameter collector-emitter saturation voltage base-emitter saturation voltage collector cutoff current emitter cutoff current dc current gain current-gain ? bandwidth product c-e diode forward voltage fall time conditions lc= 4a; ib= 0.8a lc= 4a; ib= 0.8a vcb= 800v ; ie= 0 veb= 4v ; lc= 0 lc=1a;vce=5v lc=1a;vce=10v if=5a lc= 4a , ib1= 0.8a ; ib2= -1 .6a rl= 50 q ; vcc= 200v min 40 8 typ. 3 max 5.0 1.5 10 200 2.0 0.4 unit v v ua ma mhz v u s
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